Modeling single-event effects in a complex digital device

Modeling single-event effects in a complex digital device

A methodology to quantify the impact of SEEs on complex digital devices has been developed. This methodology is based on the SEE State-Transition Model and was validated by radiation testing of a complex digital device.

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Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on nuclear science 2003-12, Vol.50 (6), p.2069-2080
Hauptverfasser: Clark, K.A., Ross, A.A., Loomis, H.H., Weatherford, T.R., Fouts, D.J., Buchner, S.P., McMorrow, D.
Format: Artikel
Sprache:eng
Schlagworte:
Circuit faults
Costs
Devices
Digital
Logic gates
Methodology
Microprocessors
Predictive models
Radiation effects
Registers
Single event upset
Testing
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Beschreibung
Zusammenfassung:A methodology to quantify the impact of SEEs on complex digital devices has been developed. This methodology is based on the SEE State-Transition Model and was validated by radiation testing of a complex digital device.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2003.821793