The effect of low-k dielectrics on RFIC inductors

The effect of low-k dielectrics on RFIC inductors

This paper presents design, fabrication, and optimization of high quality factor (Q) inductors on low dielectric polymers implemented on a high resistivity silicon substrate. Both Benzocyclobutene (BCB) and SU-8/spl trade/ dielectrics were used as low dielectric material. A maximum Q > 20 at 8GHz...

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Hauptverfasser: Jong-Hyeok Jeon, Inigo, E.J., Reiha, M.T., Tae-Young Choi, Lee, Y., Mohammadi, S., Katehi, L.P.B.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Conductivity
Design optimization
Dielectric materials
Dielectric substrates
Fabrication
Inductors
Polymers
Q factor
Radiofrequency integrated circuits
Silicon
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Beschreibung
Zusammenfassung:This paper presents design, fabrication, and optimization of high quality factor (Q) inductors on low dielectric polymers implemented on a high resistivity silicon substrate. Both Benzocyclobutene (BCB) and SU-8/spl trade/ dielectrics were used as low dielectric material. A maximum Q > 20 at 8GHz was measured for a 2.5nH inductor on SU8/spl trade/ deposited on high resistivity Si.
DOI:10.1109/EUMC.2003.1262216