High-speed photodiodes with reduced dark current and enhanced responsivity in the blue/UV spectra
A novel photodiode for the blue/UV spectral range, which is compatible to standard bulk CMOS or BiCMOS technology processes, is presented. The new diode structure is compared to an equivalent diode structure, processed with conventional contact fingers. Quantum efficiencies of 62% and 93.3% were mea...
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creator | Hohenbild, M. Seegebrecht, P. Pless, H. Einbrodt, W. |
description | A novel photodiode for the blue/UV spectral range, which is compatible to standard bulk CMOS or BiCMOS technology processes, is presented. The new diode structure is compared to an equivalent diode structure, processed with conventional contact fingers. Quantum efficiencies of 62% and 93.3% were measured for blue (405 nm) and red (638.3 nm) laser light, respectively. A -3 dB bandwidth of over 259 MHz is determined for both wavelengths. The low dark current density of 1.2 nA/cm/sub 2/ results in a very good noise performance. |
doi_str_mv | 10.1109/EDMO.2003.1259978 |
format | Conference Proceeding |
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The new diode structure is compared to an equivalent diode structure, processed with conventional contact fingers. Quantum efficiencies of 62% and 93.3% were measured for blue (405 nm) and red (638.3 nm) laser light, respectively. A -3 dB bandwidth of over 259 MHz is determined for both wavelengths. The low dark current density of 1.2 nA/cm/sub 2/ results in a very good noise performance.</description><identifier>ISBN: 9780780379046</identifier><identifier>ISBN: 0780379047</identifier><identifier>DOI: 10.1109/EDMO.2003.1259978</identifier><language>eng</language><publisher>IEEE</publisher><subject>Bandwidth ; BiCMOS integrated circuits ; CMOS process ; CMOS technology ; Dark current ; Diodes ; Fingers ; Laser noise ; Photodiodes ; Wavelength measurement</subject><ispartof>The 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2003. 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EDMO 2003</title><addtitle>EDMO</addtitle><description>A novel photodiode for the blue/UV spectral range, which is compatible to standard bulk CMOS or BiCMOS technology processes, is presented. The new diode structure is compared to an equivalent diode structure, processed with conventional contact fingers. Quantum efficiencies of 62% and 93.3% were measured for blue (405 nm) and red (638.3 nm) laser light, respectively. A -3 dB bandwidth of over 259 MHz is determined for both wavelengths. The low dark current density of 1.2 nA/cm/sub 2/ results in a very good noise performance.</description><subject>Bandwidth</subject><subject>BiCMOS integrated circuits</subject><subject>CMOS process</subject><subject>CMOS technology</subject><subject>Dark current</subject><subject>Diodes</subject><subject>Fingers</subject><subject>Laser noise</subject><subject>Photodiodes</subject><subject>Wavelength measurement</subject><isbn>9780780379046</isbn><isbn>0780379047</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2003</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotUFFLwzAYDIigzP4A8SV_oN2XNm2TR5nTCZO9OF9H0nyx0ZmWJFX2762447iDO7iHI-SWQcEYyOX64WVXlABVwcpaylZckGxWmFm1EnhzRbIYP2AG53Up4JqojXvv8zgiGjr2QxqMGwxG-uNSTwOaqZsLo8In7aYQ0CeqvKHoe-X_moBxHHx03y6dqPM09Uj1ccLl_o3Oo10K6oZcWnWMmJ19QfaP69fVJt_unp5X99vcMahTjkbzjrNSy4q1XLa2FI0ALiS0WFqhat2griTUDKGzVrE5FwKh4brT1opqQe7-dx0iHsbgvlQ4Hc5HVL9481TA</recordid><startdate>2003</startdate><enddate>2003</enddate><creator>Hohenbild, M.</creator><creator>Seegebrecht, P.</creator><creator>Pless, H.</creator><creator>Einbrodt, W.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2003</creationdate><title>High-speed photodiodes with reduced dark current and enhanced responsivity in the blue/UV spectra</title><author>Hohenbild, M. ; Seegebrecht, P. ; Pless, H. ; Einbrodt, W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i105t-edb4c412b9317497f2868048907e2f8a5b6eb39051e0cffa107e88e064bcbff83</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Bandwidth</topic><topic>BiCMOS integrated circuits</topic><topic>CMOS process</topic><topic>CMOS technology</topic><topic>Dark current</topic><topic>Diodes</topic><topic>Fingers</topic><topic>Laser noise</topic><topic>Photodiodes</topic><topic>Wavelength measurement</topic><toplevel>online_resources</toplevel><creatorcontrib>Hohenbild, M.</creatorcontrib><creatorcontrib>Seegebrecht, P.</creatorcontrib><creatorcontrib>Pless, H.</creatorcontrib><creatorcontrib>Einbrodt, W.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hohenbild, M.</au><au>Seegebrecht, P.</au><au>Pless, H.</au><au>Einbrodt, W.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>High-speed photodiodes with reduced dark current and enhanced responsivity in the blue/UV spectra</atitle><btitle>The 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003</btitle><stitle>EDMO</stitle><date>2003</date><risdate>2003</risdate><spage>60</spage><epage>65</epage><pages>60-65</pages><isbn>9780780379046</isbn><isbn>0780379047</isbn><abstract>A novel photodiode for the blue/UV spectral range, which is compatible to standard bulk CMOS or BiCMOS technology processes, is presented. The new diode structure is compared to an equivalent diode structure, processed with conventional contact fingers. Quantum efficiencies of 62% and 93.3% were measured for blue (405 nm) and red (638.3 nm) laser light, respectively. A -3 dB bandwidth of over 259 MHz is determined for both wavelengths. The low dark current density of 1.2 nA/cm/sub 2/ results in a very good noise performance.</abstract><pub>IEEE</pub><doi>10.1109/EDMO.2003.1259978</doi><tpages>6</tpages></addata></record> |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Bandwidth BiCMOS integrated circuits CMOS process CMOS technology Dark current Diodes Fingers Laser noise Photodiodes Wavelength measurement |
title | High-speed photodiodes with reduced dark current and enhanced responsivity in the blue/UV spectra |
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