Development of new antimony and indium dopants for ion implantation

Development of new antimony and indium dopants for ion implantation

Three antimony and indium compounds, CH 3 SbBr 2 , (SbCl 3 )·[SbCl 3 ·S(CH 3 ) 2 ] and (hfac)In(CH 3 ) 2 were synthesized and characterized by spectroscopic methods. These compounds are highly volatile with excellent thermal stability. CH 3 SbBr 2 contains only one carbon that may minimize carbon in...

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Bibliographische Detailangaben
Hauptverfasser: Wang, Z., McMahon, C.N., Xu, C., Baum, T.H., Mayer, J., Wang, L.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Business
Carbon compounds
Cleaning
Implants
Indium compounds
Ion implantation
Moisture
Temperature
Thermal decomposition
Thermal stability
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Zusammenfassung:Three antimony and indium compounds, CH 3 SbBr 2 , (SbCl 3 )·[SbCl 3 ·S(CH 3 ) 2 ] and (hfac)In(CH 3 ) 2 were synthesized and characterized by spectroscopic methods. These compounds are highly volatile with excellent thermal stability. CH 3 SbBr 2 contains only one carbon that may minimize carbon incorporation. (SbCl 3 )·[SbCl 3 ·S(CH 3 ) 2 ] is a new volatile dimeric compound. (hfac)In(CH 3 ) 2 is an air and moisture stable compound and is readily sublimed at room temperature. These compounds show promise for use as ion implant dopants.
DOI:10.1109/IIT.2002.1258024