Arsenic dimer implants for shallow extension in 0.13μm logic devices

Arsenic dimer, As 2 + , implants have been used for the formation of ultra-shallow source drain extensions for NMOS transistors in a 0.13 μm, 1.5 V CMOS logic process. A comparison of all electrical parameters including drive currents, sheet resistance, junction breakdown voltages and gate to drain...

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Bibliographische Detailangaben

Hauptverfasser:	Chang, B., Chang, J., Agarwal, A., Ameen, M.S., Reece, R.N., Chen, H.I., Chien, D., Tsai, C.C., Tsai, M., Weng, C.L., Wu, D.Y., Yang, C.K.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Capacitance CMOS logic circuits CMOS process Contamination Electric resistance Implants Logic devices MOSFETs Silicon Throughput
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