Investigation of indium activation by SRP and SIMS for sub-0.1 μm retrograde channels

Investigation of indium activation by SRP and SIMS for sub-0.1 μm retrograde channels

SRP, SIMS and C-V measurements of implanted Si wafers were carried out in this study to examine the effect of annealing conditions on the activation of acceptors. Shorter RTP annealing at relatively low temperatures provided higher Indium activation levels as determined by R s measurements. The infl...

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Bibliographische Detailangaben
Hauptverfasser: Suvkhanov, A., Mirabedini, M., Hornback, V.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Boron
Capacitance-voltage characteristics
Implants
Indium
Large scale integration
Logic
MOSFETs
Solid state circuits
Temperature
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Zusammenfassung:SRP, SIMS and C-V measurements of implanted Si wafers were carried out in this study to examine the effect of annealing conditions on the activation of acceptors. Shorter RTP annealing at relatively low temperatures provided higher Indium activation levels as determined by R s measurements. The influence of the implantation sequence (In+B and B+In) on the dopant distribution was also investigated. The In+B implantation sequence yielded shallower profiles than the B+In implantation. It can be suggested that Indium implantation provides efficient pre-amorphization condition for Boron implantation. Device data for some of these conditions were obtained and the influence of RTP anneal on device performance was critically reviewed.
DOI:10.1109/IIT.2002.1257930