Subthreshold region conduction and 1/f noise empirical models in N-MOSFETs

Subthreshold region conduction and 1/f noise empirical models in N-MOSFETs

Temperature dependence measurements of the subthreshold current are performed in MOSFETs and show that this current is well described by the Meyer-Neldel effect. A low-frequency noise model, based on carrier fluctuations including this effect, is established to describe the noise in the subthreshold...

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Bibliographische Detailangaben
Hauptverfasser: Pichon, L., Routoure, J.M., Carin, R., Nze Mekwama, L.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Current measurement
Fluctuations
Lead compounds
Low-frequency noise
MOSFET circuits
Performance evaluation
Qualifications
Subthreshold current
Temperature dependence
Temperature measurement
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Beschreibung
Zusammenfassung:Temperature dependence measurements of the subthreshold current are performed in MOSFETs and show that this current is well described by the Meyer-Neldel effect. A low-frequency noise model, based on carrier fluctuations including this effect, is established to describe the noise in the subthreshold region. This model leads to the qualification of several technologies and particularly to the extraction of the oxide state density.
DOI:10.1109/ESSDERC.2003.1256909