Nickel vs. cobalt silicide integration for sub-50nm CMOS

In this work, NiSi SALICIDE has been fully integrated with sub-50 nm gate length transistors and compared to its CoSi/sub 2/ counterpart. Nickel thickness has been reduced to target the CoSi/sub 2/ sheet resistance. It was found that NiSi layers basic lattice planes with vertical orientation are oft...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Froment, B., Muller, M., Brut, H., Pantel, R., Carron, V., Achard, H., Halimaoui, A., Boeuf, F., Wacquant, F., Regnier, C., Ceccarelli, D., Palla, R., Beverina, A., DeJonghe, V., Spinelli, P., Leborgne, O., Bard, K., Lis, S., Tirard, V., Morin, P., Trentesaux, F., Gravey, V., Mandrekar, T., Rabilloud, D., Van, S., Olson, E., Diedrick, J.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing Cobalt Conductivity MOS devices Nickel Schottky diodes Semiconductor diodes Sheet materials Silicides Thermal resistance
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