Germanium-doped epitaxial silicon layers for SHF ICs

Germanium-doped epitaxial silicon layers for SHF ICs

It is shown that Ge-doping of silicon may be implemented in the technology of the SHF IC manufacture. Epitaxial layers doped with germanium allow for the leakage current to be decreased and for the breakdown voltage of p-n-junctions and MOS structures produced by the MOSFET process to be increased.

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Bibliographische Detailangaben
Hauptverfasser: Brinkevich, D.I., Prosolovich, V.S., Yankovski, O.N., Yankovski, Yu.N.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Dielectrics
Epitaxial layers
Germanium
Helium
IEEE catalog
Leakage current
Microwave technology
Organizing
Silicon
Voltage
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Beschreibung
Zusammenfassung:It is shown that Ge-doping of silicon may be implemented in the technology of the SHF IC manufacture. Epitaxial layers doped with germanium allow for the leakage current to be decreased and for the breakdown voltage of p-n-junctions and MOS structures produced by the MOSFET process to be increased.
DOI:10.1109/CRMICO.2003.158939