Improved parameters of fast phase shifters operating at increased levels of input microwave power

Improved parameters of fast phase shifters operating at increased levels of input microwave power

Results of experimentally investigating the performance of 3 cm band discrete semiconductor phase shifters at increased levels of input microwave power are presented. Ways of improving parameters of phase shifters are suggested.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Guz, V.I., Zaytsev, A.A., Lipatov, V.P., Lobko, V.S., Malhozov, M.F., Martynov, V.A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bandwidth
Hidden Markov models
IEEE catalog
Microwave technology
Organizing
Phase shifters
Propagation losses
Semiconductor diodes
Telecommunications
Testing
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Results of experimentally investigating the performance of 3 cm band discrete semiconductor phase shifters at increased levels of input microwave power are presented. Ways of improving parameters of phase shifters are suggested.
DOI:10.1109/CRMICO.2003.158791