Silicon IMPATT diodes of improved reliability

We present the results of our investigation of silicon double-drift diodes intended for the millimeter wavelength range. Their ohmic contacts to the n/sup +/-area were based on the Pd/sub 2/Si-Ti-Pd-Au metallization, while those to the p/sup +/-area were based on the Pd/sub 2/Si-TiN-Ti-Au metallizat...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Boltovetes, N.S., Basanets, V.V., Ovar, A.V., Kurakin, A.M., Venger, E.F., Konakova, R.V., Milenin, V.V., Soloviev, E.A.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Diodes Gaussian processes Helium Indium tin oxide Microwave technology Silicon
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!