Silicon IMPATT diodes of improved reliability

Silicon IMPATT diodes of improved reliability

We present the results of our investigation of silicon double-drift diodes intended for the millimeter wavelength range. Their ohmic contacts to the n/sup +/-area were based on the Pd/sub 2/Si-Ti-Pd-Au metallization, while those to the p/sup +/-area were based on the Pd/sub 2/Si-TiN-Ti-Au metallizat...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Boltovetes, N.S., Basanets, V.V., Ovar, A.V., Kurakin, A.M., Venger, E.F., Konakova, R.V., Milenin, V.V., Soloviev, E.A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Diodes
Gaussian processes
Helium
Indium tin oxide
Microwave technology
Silicon
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We present the results of our investigation of silicon double-drift diodes intended for the millimeter wavelength range. Their ohmic contacts to the n/sup +/-area were based on the Pd/sub 2/Si-Ti-Pd-Au metallization, while those to the p/sup +/-area were based on the Pd/sub 2/Si-TiN-Ti-Au metallization. The accelerated tests of these IMPATT diodes at T=335, 346 and 375/spl deg/C have shown that the activation energy of degradation processes was 2.03 eV. An analysis of the diodes after failure has shown that no parametric failures occurred; the only mechanism for failures was metal penetration through the mesa.
DOI:10.1109/CRMICO.2000.1255878