Silicon IMPATT diodes of improved reliability
We present the results of our investigation of silicon double-drift diodes intended for the millimeter wavelength range. Their ohmic contacts to the n/sup +/-area were based on the Pd/sub 2/Si-Ti-Pd-Au metallization, while those to the p/sup +/-area were based on the Pd/sub 2/Si-TiN-Ti-Au metallizat...
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| creator | Boltovetes, N.S. Basanets, V.V. Ovar, A.V. Kurakin, A.M. Venger, E.F. Konakova, R.V. Milenin, V.V. Soloviev, E.A. |
| description | We present the results of our investigation of silicon double-drift diodes intended for the millimeter wavelength range. Their ohmic contacts to the n/sup +/-area were based on the Pd/sub 2/Si-Ti-Pd-Au metallization, while those to the p/sup +/-area were based on the Pd/sub 2/Si-TiN-Ti-Au metallization. The accelerated tests of these IMPATT diodes at T=335, 346 and 375/spl deg/C have shown that the activation energy of degradation processes was 2.03 eV. An analysis of the diodes after failure has shown that no parametric failures occurred; the only mechanism for failures was metal penetration through the mesa. |
| doi_str_mv | 10.1109/CRMICO.2000.1255878 |
| format | Conference Proceeding |
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An analysis of the diodes after failure has shown that no parametric failures occurred; the only mechanism for failures was metal penetration through the mesa.</description><subject>Diodes</subject><subject>Gaussian processes</subject><subject>Helium</subject><subject>Indium tin oxide</subject><subject>Microwave technology</subject><subject>Silicon</subject><isbn>9665720481</isbn><isbn>9789665720485</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2000</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpjYJA2NNAzNDSw1HcO8vV09tczMjAAChiZmlqYWzAzcFmamZmaGxmYWBhyMPAWF2cBZQ1MTE0sDc04GXSDM3Myk_PzFDx9AxxDQhRSMvNTUosV8tMUMnMLivLLUlMUilJzMhOTgMpKKnkYWNMSc4pTeaE0N4O0m2uIs4duZmpqanxBUWZuYlFlPNRmY_yyAHCdMes</recordid><startdate>2000</startdate><enddate>2000</enddate><creator>Boltovetes, N.S.</creator><creator>Basanets, V.V.</creator><creator>Ovar, A.V.</creator><creator>Kurakin, A.M.</creator><creator>Venger, E.F.</creator><creator>Konakova, R.V.</creator><creator>Milenin, V.V.</creator><creator>Soloviev, E.A.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2000</creationdate><title>Silicon IMPATT diodes of improved reliability</title><author>Boltovetes, N.S. ; Basanets, V.V. ; Ovar, A.V. ; Kurakin, A.M. ; Venger, E.F. ; Konakova, R.V. ; Milenin, V.V. ; Soloviev, E.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_12558783</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Diodes</topic><topic>Gaussian processes</topic><topic>Helium</topic><topic>Indium tin oxide</topic><topic>Microwave technology</topic><topic>Silicon</topic><toplevel>online_resources</toplevel><creatorcontrib>Boltovetes, N.S.</creatorcontrib><creatorcontrib>Basanets, V.V.</creatorcontrib><creatorcontrib>Ovar, A.V.</creatorcontrib><creatorcontrib>Kurakin, A.M.</creatorcontrib><creatorcontrib>Venger, E.F.</creatorcontrib><creatorcontrib>Konakova, R.V.</creatorcontrib><creatorcontrib>Milenin, V.V.</creatorcontrib><creatorcontrib>Soloviev, E.A.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Boltovetes, N.S.</au><au>Basanets, V.V.</au><au>Ovar, A.V.</au><au>Kurakin, A.M.</au><au>Venger, E.F.</au><au>Konakova, R.V.</au><au>Milenin, V.V.</au><au>Soloviev, E.A.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Silicon IMPATT diodes of improved reliability</atitle><btitle>2000 10th International Crimean Microwave Conference. 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| subjects | Diodes Gaussian processes Helium Indium tin oxide Microwave technology Silicon |
| title | Silicon IMPATT diodes of improved reliability |
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