Scaling of high-k dielectrics towards sub-1nm EOT

High-k dielectric layers are deposited using ALD or MOCVD. Most of the work focused on Hf-based high-k dielectrics, either as pure HfO/sub 2/, as silicate or mixed with Al/sub 2/O/sub 3/. In some cases nitrogen is added to improve the high-temperature stability. Various surface preparation methods a...

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Hauptverfasser:	Heyns, M., Beckx, S., Bender, H., Blomme, P., Boullart, W., Brijs, B., Carter, R., Caymax, M., Claes, M., Conard, T., De Gendt, S., Degraeve, R., Delabie, A., Deweerdt, W., Groeseneken, G., Henson, K., Kauerauf, T., Kubicek, S., Lucci, L., Lujan, G., Mentens, J., Pantisano, L., Petry, J., Richard, O., Rohr, E., Schram, T., Vandervorst, W., Van Doorne, P., Van Elshocht, S., Westlinder, J., Witters, T., Zhao, C., Cartier, E., Chen, J., Cosnier, V., Green, M., Jang, S.E., Kaushik, V., Kerber, A., Kluth, J., Lin, S., Tsai, W., Young, E., Manabe, Y., Shimamoto, Y., Bajolet, P., De Witte, H., Maes, J.W., Date, L., Pique, D., Coenegrachts, B., Vertommen, J., Passefort, S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Degradation Electrodes Hafnium oxide High K dielectric materials High-K gate dielectrics Materials processing MOCVD Nitrogen Testing Thermal stability
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