Scaling of high-k dielectrics towards sub-1nm EOT

Scaling of high-k dielectrics towards sub-1nm EOT

High-k dielectric layers are deposited using ALD or MOCVD. Most of the work focused on Hf-based high-k dielectrics, either as pure HfO/sub 2/, as silicate or mixed with Al/sub 2/O/sub 3/. In some cases nitrogen is added to improve the high-temperature stability. Various surface preparation methods a...

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Hauptverfasser: Heyns, M., Beckx, S., Bender, H., Blomme, P., Boullart, W., Brijs, B., Carter, R., Caymax, M., Claes, M., Conard, T., De Gendt, S., Degraeve, R., Delabie, A., Deweerdt, W., Groeseneken, G., Henson, K., Kauerauf, T., Kubicek, S., Lucci, L., Lujan, G., Mentens, J., Pantisano, L., Petry, J., Richard, O., Rohr, E., Schram, T., Vandervorst, W., Van Doorne, P., Van Elshocht, S., Westlinder, J., Witters, T., Zhao, C., Cartier, E., Chen, J., Cosnier, V., Green, M., Jang, S.E., Kaushik, V., Kerber, A., Kluth, J., Lin, S., Tsai, W., Young, E., Manabe, Y., Shimamoto, Y., Bajolet, P., De Witte, H., Maes, J.W., Date, L., Pique, D., Coenegrachts, B., Vertommen, J., Passefort, S.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Degradation
Electrodes
Hafnium oxide
High K dielectric materials
High-K gate dielectrics
Materials processing
MOCVD
Nitrogen
Testing
Thermal stability
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Beschreibung
Zusammenfassung:High-k dielectric layers are deposited using ALD or MOCVD. Most of the work focused on Hf-based high-k dielectrics, either as pure HfO/sub 2/, as silicate or mixed with Al/sub 2/O/sub 3/. In some cases nitrogen is added to improve the high-temperature stability. Various surface preparation methods and deposition conditions are tested. Compatibility of the high-k stacks with poly-Si and metal electrodes is investigated. Significant improvements in yield and thermal stability are obtained by optimized modifications of the high-k stack. Scaling of the equivalent oxide thickness (EOT) is accomplished by implementing novel ideas in interface engineering and high-k materials processing. High-k stacks are tested in transistor structures with small gate lengths. The origin of the electrical instabilities and the observed drive current degradation of high-k transistors as compared to the SiO/sub 2/ reference transistors are studied in detail.
ISSN:1524-766X
2690-8174
DOI:10.1109/VTSA.2003.1252599