A high-performance AlGaAs/InGaAs/GaAs pseudomorphic MODFET-based monolithic optoelectronic receiver

A high-performance AlGaAs/InGaAs/GaAs pseudomorphic MODFET-based monolithic optoelectronic receiver

A monolithically integrated optoelectronic receiver based on the pseudomorphic InGaAs on GaAs material system has been fabricated and tested for the first time. Quarter-micrometer modulation-doped field-effect transistors (MODFETs) with f/sub t/'s of 66 GHz are used in the two-stage transimpeda...

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Veröffentlicht in:IEEE photonics technology letters 1992-01, Vol.4 (1), p.73-76
Hauptverfasser: Keterson, A.A., Tong, M., Seo, J.-W., Nummila, K., Morikuni, J.J., Kang, S.-M., Adesida, I.
Format: Artikel
Sprache:eng
Schlagworte:
Circuit testing
Epitaxial layers
FETs
Gallium arsenide
HEMTs
Indium gallium arsenide
Integrated optoelectronics
Materials testing
MODFET circuits
System testing
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Beschreibung
Zusammenfassung:A monolithically integrated optoelectronic receiver based on the pseudomorphic InGaAs on GaAs material system has been fabricated and tested for the first time. Quarter-micrometer modulation-doped field-effect transistors (MODFETs) with f/sub t/'s of 66 GHz are used in the two-stage transimpedance amplifier design. The circuit utilizes all active components including a metal-semiconductor-metal (MSM) photodetector and a common-gate FET active feedback resistor.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.124881