Temperature dependence of the threshold and auger recombination in asymmetric quantum-well heterolasers

In this work, the temperature dependence of the lasing threshold in the GalnAs-GaInAsP-InP bi-quantum-well heterolasers with different widths of the quantum wells (5 and 9 nm) has been determined. The AR rate increases practically exponentially in the temperature interval 250 to 350 K. Including int...

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Bibliographische Detailangaben
Hauptverfasser:	Sukhoivanov, I.A., Mashoshina, O.V., Kononenko, V.K., Ushakov, D.V.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Electron optics Fiber lasers Laser transitions Optical refraction Quantum well lasers Quantum wells Radiative recombination Semiconductor lasers Spontaneous emission Temperature dependence
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Zusammenfassung:	In this work, the temperature dependence of the lasing threshold in the GalnAs-GaInAsP-InP bi-quantum-well heterolasers with different widths of the quantum wells (5 and 9 nm) has been determined. The AR rate increases practically exponentially in the temperature interval 250 to 350 K. Including into consideration the processes of nonradiative AR allows to take account of the nonequilibrium processes which occur in the active region of the quantum-well lasers more completely and accurately.
DOI:	10.1109/LFNM.2003.1246144