Optical transitions from SiO/sub 2//crystalline Si/SiO/sub 2/ quantum wells

Optical transitions from SiO/sub 2//crystalline Si/SiO/sub 2/ quantum wells

Crystalline silicon single quantum wells were fabricated by high temperature thermal oxidation of ELTRAN silicon-on-insulator (SOI) wafers. The Si layer thickness enclosed by thermal SiO/sub 2/ ranges from 1.1 to 4.3 nm, measured by high resolution transmission electron microscopy (HRTEM). Si thickn...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Cho, E.C., Reece, P., Green, M.A., Corkish, R., Gal, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Cleaning
Crystallization
Image resolution
Laser transitions
Lattices
Luminescence
Oxidation
Photoluminescence
Quantum well lasers
Silicon
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Crystalline silicon single quantum wells were fabricated by high temperature thermal oxidation of ELTRAN silicon-on-insulator (SOI) wafers. The Si layer thickness enclosed by thermal SiO/sub 2/ ranges from 1.1 to 4.3 nm, measured by high resolution transmission electron microscopy (HRTEM). Si thickness dependent luminescence in SiO/sub 2//Si/SiO/sub 2/ quantum wells was observed for the samples with 1.1 nm to 2.7 nm thick Si. Luminescent peak energy varies from 730 nm to 920 nm without interface-mediated luminescence.
ISSN:1097-2137
2377-5505
DOI:10.1109/COMMAD.2002.1237244