Unique properties of quantum dot lasers

Quantum dot (QD) lasers on GaAs substrates demonstrate parameters improved over quantum well-based devices and operate in an extended wavelength range. Pseudomorphic 1.3 /spl mu/m InAs-GaAs QD lasers demonstrate low threshold current density (J/sub th//sup 300 K/80%), and low losses (/spl alpha/60-7...

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Bibliographische Detailangaben
Hauptverfasser:	Ledentsov, N.N., Kovsh, A.R., Ouyang, D., Zhukov, A.E., Ustinov, V.M., Maximov, M.V., Shernyakov, Yu.M., Kryzhanovskaya, N.V., Kaiander, I.N., Sellin, R., Bimberg, D.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Gallium arsenide Laser beams Quantum dot lasers Quantum well lasers Surface emitting lasers Surface waves Temperature Threshold current Time of arrival estimation Vertical cavity surface emitting lasers
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Beschreibung
Zusammenfassung:	Quantum dot (QD) lasers on GaAs substrates demonstrate parameters improved over quantum well-based devices and operate in an extended wavelength range. Pseudomorphic 1.3 /spl mu/m InAs-GaAs QD lasers demonstrate low threshold current density (J/sub th//sup 300 K/80%), and low losses (/spl alpha/60-70%) and low losses (/spl alpha/
DOI:	10.1109/NANO.2003.1231792