Patterning Si/sub 3/N/sub 4/ and TiN with scanning probe lithography

Patterning Si/sub 3/N/sub 4/ and TiN with scanning probe lithography

Processes to pattern nanostructures on the Si/sub 3/N/sub 4/ and TiN films based on scanning probe lithography have been demonstrated. The patterned Si/sub 3/N/sub 4/ and TiN films were used as etch masks to produce nanostructure on Si substrates. The oxide growth kinetics of both nitride films was...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Chien, F.S.-S., You, Y.-C., Yao, B.C., Hsieh, J.-L., Lai, D.-Y., Lai, C.-S., Jeng, D.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Atomic force microscopy
Dry etching
Lithography
Nanostructures
Oxidation
Probes
Semiconductor films
Substrates
Tin
Wet etching
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Processes to pattern nanostructures on the Si/sub 3/N/sub 4/ and TiN films based on scanning probe lithography have been demonstrated. The patterned Si/sub 3/N/sub 4/ and TiN films were used as etch masks to produce nanostructure on Si substrates. The oxide growth kinetics of both nitride films was studied. The oxide height vs. oxidation period obeys the logarithmic relationship. TiN is superior to Si/sub 3/N/sub 4/ as etching mask due to its high oxide growth rate and better performance for dry etching.
DOI:10.1109/NANO.2003.1231031