Low-voltage AlGaSb/InAs/AlGaSb PnP HBTs

Low-voltage AlGaSb/InAs/AlGaSb PnP HBTs

In this paper, we report on a significantly re-designed InAs/AlGaSb PnP transistor with improved low voltage operation, high collector current densities, and dc current gain approaching 50. The present device was grown on lattice matched GaSb substrates with the active layer thickness of the device...

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Hauptverfasser: Brar, B., Bergman, J., Pierson, R., Rowell, P., Nagy, G., Sullivan, G., Kadow, C., Lin, H.K., Gossard, A., Rodwell, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Charge measurement
Conducting materials
Current density
Current measurement
Gain measurement
Heterojunction bipolar transistors
Inspection
Low voltage
Ohmic contacts
Space charge
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Zusammenfassung:In this paper, we report on a significantly re-designed InAs/AlGaSb PnP transistor with improved low voltage operation, high collector current densities, and dc current gain approaching 50. The present device was grown on lattice matched GaSb substrates with the active layer thickness of the device consisting of only 115nm sandwiched between P-type GaSb emitter and collector contacts.
DOI:10.1109/DRC.2003.1226887