A silicon gated field edge cathode

In this paper, we discuss the peculiarities of the design and technology of the Silicon Gated Field Edge Cathode on the hole silicon. Such cathodes have been formed with the help of the CMOS technology of plasma etching with the thermal oxidation.

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Bibliographische Detailangaben
Hauptverfasser:	Dyuzhev, N.A., Beliaev, S.N., Vlasenko, V.A., Gogin, A.A., Gontar, V.M., Deniskin, V.V., Mazaev, A.A., Nevsky, A.B., Tishin, Y.I., Shokin, A.N.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Anodes Cathodes Circuits Cities and towns CMOS technology Electron emission Optical scattering Silicon Space charge Voltage
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Beschreibung
Zusammenfassung:	In this paper, we discuss the peculiarities of the design and technology of the Silicon Gated Field Edge Cathode on the hole silicon. Such cathodes have been formed with the help of the CMOS technology of plasma etching with the thermal oxidation.
DOI:	10.1109/IVMC.2003.1223041