High mobility MISFET with low trapped charge in HfSiO films

High mobility MISFET with low trapped charge in HfSiO films

MISFETs with HfSiO (EOT:1.8 nm) gate insulator have been reached high Ion (95%) and low gate leakage current (1/100) against SiO/sub 2/ gate film. This was achieved by the suppression of the remote Coulomb scattering, caused by the electron traps in the HfSiO gate stack. It was experimentally confir...

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Bibliographische Detailangaben
Hauptverfasser: Morioka, Ayuka, Watanabe, Hirohito, Miyamura, Makoto, Tatsumi, Toru, Saitoh, Motohumi, Ogura, Takashi, Iwamoto, Toshiyuki, Ikarashi, Taeko, Saito, Yukishige, Okada, Yuko, Watanabe, Heiji, Mochiduki, Yasunori, Mogami, Tohru
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitance-voltage characteristics
Electrodes
Electron traps
High-K gate dielectrics
Insulation
Leakage current
MISFETs
Semiconductor films
Silicon
Voltage
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Zusammenfassung:MISFETs with HfSiO (EOT:1.8 nm) gate insulator have been reached high Ion (95%) and low gate leakage current (1/100) against SiO/sub 2/ gate film. This was achieved by the suppression of the remote Coulomb scattering, caused by the electron traps in the HfSiO gate stack. It was experimentally confirmed that less than 3/spl times/10/sup 12/ C/cm/sup 2/ electron trap level is required to get high mobility.
DOI:10.1109/VLSIT.2003.1221137