3D TFT-SONOS memory cell for ultra-high density file storage applications

For the first time, a scalable, low power, deep-submicron TFT-SONOS (Thin-Film Transistor Silicon-Oxide-Nitride-Oxide-Silicon) memory cell is described with characteristics rivaling those of single crystal devices (>10/sup 6/ cycles, /spl sim/1.6 V window after 10 years on cycled cell at 85 C) sh...

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Bibliographische Detailangaben
Hauptverfasser:	Walker, A.J., Nallamothu, S., Chen, E.-H., Mahajani, M., Herner, S.B., Clark, M., Cleeves, J.M., Dunton, S.V., Eckert, V.L., Gu, J., Hu, S., Knall, J., Konevecki, M., Petti, C., Radigan, S., Raghuram, U., Vienna, J., Vyvoda, M.A.
Format:	Tagungsbericht
Sprache:	eng ; jpn
Schlagworte:	Costs Fabrication Hafnium Nonvolatile memory Silicon SONOS devices Thin film transistors Tunneling Voltage
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Beschreibung
Zusammenfassung:	For the first time, a scalable, low power, deep-submicron TFT-SONOS (Thin-Film Transistor Silicon-Oxide-Nitride-Oxide-Silicon) memory cell is described with characteristics rivaling those of single crystal devices (>10/sup 6/ cycles, /spl sim/1.6 V window after 10 years on cycled cell at 85 C) showing the promise of 3D integration and ultra-small cell footprints. The ability to vertically stack device layers enables the current memory density record of /spl sim/200 Mbyte/cm/sup 2/, set by 90 nm NAND, to be surpassed.
DOI:	10.1109/VLSIT.2003.1221070