Paving the way for full-fluid IC metallization using supercritical carbon dioxide

Paving the way for full-fluid IC metallization using supercritical carbon dioxide

Metal thin films for IC metallization are currently deposited either from vapor (PVD/CVD) or liquid (e.g. ECD). This paper reports critical bases for full IC metallization using only supercritical carbon dioxide (scCO/sub 2/) fluids as a deposition medium. High-aspect-ratio filling capability, (111)...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Kondoh, E., Vezin, V., Shigama, K., Sunada, S., Kubo, K., Ohta, T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Carbon dioxide
Copper
Electrons
Filling
Hydrogen
Inductors
Metallization
Solvents
Sputtering
Temperature dependence
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 143
container_issue
container_start_page 141
container_title
container_volume
creator Kondoh, E.
Vezin, V.
Shigama, K.
Sunada, S.
Kubo, K.
Ohta, T.
description Metal thin films for IC metallization are currently deposited either from vapor (PVD/CVD) or liquid (e.g. ECD). This paper reports critical bases for full IC metallization using only supercritical carbon dioxide (scCO/sub 2/) fluids as a deposition medium. High-aspect-ratio filling capability, (111)-preferential growth, low temperature deposition possibility, important roles of solvent capability of scCO/sub 2/ including F-less solid precursor utilization, and barrier metal deposition possibility are described.
doi_str_mv 10.1109/IITC.2003.1219736
format Conference Proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_1219736</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1219736</ieee_id><sourcerecordid>1219736</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-ada5a74da69476d7efbf4a8169be4db6d13e488ea23c709b553b58ee482194ba3</originalsourceid><addsrcrecordid>eNotT21LwzAYDIigzP6A4Zf8gdakSZrmoxRfCgMVts_jSfNEI9k60ladv94Odxwc3B0HR8iSs4JzZu7adt0UJWOi4CU3WlQXJDO6ZjOF1kbLK5INwyebIYwSkl-Tt1f4Cvt3On4g_YYj9X2ifoox93EKjrYN3eEIMYZfGEO_p9Nwag_TAVOXwhg6iLSDZOfIhf4nOLwhlx7igNlZF2Tz-LBunvPVy1Pb3K_ywLUac3CgQEsHlZG6chq99RJqXhmL0tnKcYGyrhFK0WlmrFLCqhpnb74mLYgFuf3fDYi4PaSwg3Tcno-LP7c2T2E</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Paving the way for full-fluid IC metallization using supercritical carbon dioxide</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Kondoh, E. ; Vezin, V. ; Shigama, K. ; Sunada, S. ; Kubo, K. ; Ohta, T.</creator><creatorcontrib>Kondoh, E. ; Vezin, V. ; Shigama, K. ; Sunada, S. ; Kubo, K. ; Ohta, T.</creatorcontrib><description>Metal thin films for IC metallization are currently deposited either from vapor (PVD/CVD) or liquid (e.g. ECD). This paper reports critical bases for full IC metallization using only supercritical carbon dioxide (scCO/sub 2/) fluids as a deposition medium. High-aspect-ratio filling capability, (111)-preferential growth, low temperature deposition possibility, important roles of solvent capability of scCO/sub 2/ including F-less solid precursor utilization, and barrier metal deposition possibility are described.</description><identifier>ISBN: 9780780377974</identifier><identifier>ISBN: 0780377974</identifier><identifier>DOI: 10.1109/IITC.2003.1219736</identifier><language>eng</language><publisher>IEEE</publisher><subject>Carbon dioxide ; Copper ; Electrons ; Filling ; Hydrogen ; Inductors ; Metallization ; Solvents ; Sputtering ; Temperature dependence</subject><ispartof>Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695), 2003, p.141-143</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1219736$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1219736$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kondoh, E.</creatorcontrib><creatorcontrib>Vezin, V.</creatorcontrib><creatorcontrib>Shigama, K.</creatorcontrib><creatorcontrib>Sunada, S.</creatorcontrib><creatorcontrib>Kubo, K.</creatorcontrib><creatorcontrib>Ohta, T.</creatorcontrib><title>Paving the way for full-fluid IC metallization using supercritical carbon dioxide</title><title>Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)</title><addtitle>IITC</addtitle><description>Metal thin films for IC metallization are currently deposited either from vapor (PVD/CVD) or liquid (e.g. ECD). This paper reports critical bases for full IC metallization using only supercritical carbon dioxide (scCO/sub 2/) fluids as a deposition medium. High-aspect-ratio filling capability, (111)-preferential growth, low temperature deposition possibility, important roles of solvent capability of scCO/sub 2/ including F-less solid precursor utilization, and barrier metal deposition possibility are described.</description><subject>Carbon dioxide</subject><subject>Copper</subject><subject>Electrons</subject><subject>Filling</subject><subject>Hydrogen</subject><subject>Inductors</subject><subject>Metallization</subject><subject>Solvents</subject><subject>Sputtering</subject><subject>Temperature dependence</subject><isbn>9780780377974</isbn><isbn>0780377974</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2003</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotT21LwzAYDIigzP6A4Zf8gdakSZrmoxRfCgMVts_jSfNEI9k60ladv94Odxwc3B0HR8iSs4JzZu7adt0UJWOi4CU3WlQXJDO6ZjOF1kbLK5INwyebIYwSkl-Tt1f4Cvt3On4g_YYj9X2ifoox93EKjrYN3eEIMYZfGEO_p9Nwag_TAVOXwhg6iLSDZOfIhf4nOLwhlx7igNlZF2Tz-LBunvPVy1Pb3K_ywLUac3CgQEsHlZG6chq99RJqXhmL0tnKcYGyrhFK0WlmrFLCqhpnb74mLYgFuf3fDYi4PaSwg3Tcno-LP7c2T2E</recordid><startdate>2003</startdate><enddate>2003</enddate><creator>Kondoh, E.</creator><creator>Vezin, V.</creator><creator>Shigama, K.</creator><creator>Sunada, S.</creator><creator>Kubo, K.</creator><creator>Ohta, T.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2003</creationdate><title>Paving the way for full-fluid IC metallization using supercritical carbon dioxide</title><author>Kondoh, E. ; Vezin, V. ; Shigama, K. ; Sunada, S. ; Kubo, K. ; Ohta, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-ada5a74da69476d7efbf4a8169be4db6d13e488ea23c709b553b58ee482194ba3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Carbon dioxide</topic><topic>Copper</topic><topic>Electrons</topic><topic>Filling</topic><topic>Hydrogen</topic><topic>Inductors</topic><topic>Metallization</topic><topic>Solvents</topic><topic>Sputtering</topic><topic>Temperature dependence</topic><toplevel>online_resources</toplevel><creatorcontrib>Kondoh, E.</creatorcontrib><creatorcontrib>Vezin, V.</creatorcontrib><creatorcontrib>Shigama, K.</creatorcontrib><creatorcontrib>Sunada, S.</creatorcontrib><creatorcontrib>Kubo, K.</creatorcontrib><creatorcontrib>Ohta, T.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kondoh, E.</au><au>Vezin, V.</au><au>Shigama, K.</au><au>Sunada, S.</au><au>Kubo, K.</au><au>Ohta, T.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Paving the way for full-fluid IC metallization using supercritical carbon dioxide</atitle><btitle>Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)</btitle><stitle>IITC</stitle><date>2003</date><risdate>2003</risdate><spage>141</spage><epage>143</epage><pages>141-143</pages><isbn>9780780377974</isbn><isbn>0780377974</isbn><abstract>Metal thin films for IC metallization are currently deposited either from vapor (PVD/CVD) or liquid (e.g. ECD). This paper reports critical bases for full IC metallization using only supercritical carbon dioxide (scCO/sub 2/) fluids as a deposition medium. High-aspect-ratio filling capability, (111)-preferential growth, low temperature deposition possibility, important roles of solvent capability of scCO/sub 2/ including F-less solid precursor utilization, and barrier metal deposition possibility are described.</abstract><pub>IEEE</pub><doi>10.1109/IITC.2003.1219736</doi><tpages>3</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISBN: 9780780377974
ispartof Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695), 2003, p.141-143
issn
language eng
recordid cdi_ieee_primary_1219736
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Carbon dioxide
Copper
Electrons
Filling
Hydrogen
Inductors
Metallization
Solvents
Sputtering
Temperature dependence
title Paving the way for full-fluid IC metallization using supercritical carbon dioxide
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T11%3A33%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Paving%20the%20way%20for%20full-fluid%20IC%20metallization%20using%20supercritical%20carbon%20dioxide&rft.btitle=Proceedings%20of%20the%20IEEE%202003%20International%20Interconnect%20Technology%20Conference%20(Cat.%20No.03TH8695)&rft.au=Kondoh,%20E.&rft.date=2003&rft.spage=141&rft.epage=143&rft.pages=141-143&rft.isbn=9780780377974&rft.isbn_list=0780377974&rft_id=info:doi/10.1109/IITC.2003.1219736&rft_dat=%3Cieee_6IE%3E1219736%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1219736&rfr_iscdi=true