Paving the way for full-fluid IC metallization using supercritical carbon dioxide

Paving the way for full-fluid IC metallization using supercritical carbon dioxide

Metal thin films for IC metallization are currently deposited either from vapor (PVD/CVD) or liquid (e.g. ECD). This paper reports critical bases for full IC metallization using only supercritical carbon dioxide (scCO/sub 2/) fluids as a deposition medium. High-aspect-ratio filling capability, (111)...

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Hauptverfasser: Kondoh, E., Vezin, V., Shigama, K., Sunada, S., Kubo, K., Ohta, T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Carbon dioxide
Copper
Electrons
Filling
Hydrogen
Inductors
Metallization
Solvents
Sputtering
Temperature dependence
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Zusammenfassung:Metal thin films for IC metallization are currently deposited either from vapor (PVD/CVD) or liquid (e.g. ECD). This paper reports critical bases for full IC metallization using only supercritical carbon dioxide (scCO/sub 2/) fluids as a deposition medium. High-aspect-ratio filling capability, (111)-preferential growth, low temperature deposition possibility, important roles of solvent capability of scCO/sub 2/ including F-less solid precursor utilization, and barrier metal deposition possibility are described.
DOI:10.1109/IITC.2003.1219736