XRD characterization of the MBE grown Si:GaAs, GaAs, AlGaAs, and InGaAs epilayer

The molecular beam epitaxial growth of Si-doped GaAs, GaAs buffer layer, Al/sub 0.3/Ga/sub 0.7/As (x=0.3) and In/sub x/Ga/sub 1-x/As (x=0.2-0.4) on GaAs(100) substrate were examined by X-ray diffraction. Crystallinity of each layer was compared for each sample. The x composition value calculated fro...

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Hauptverfasser:	Dee Chang Fu, Jusoh, M.S., Mat, A.F.A., Majlis, B.Y.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Buffer layers Crystallization Gallium arsenide Indium gallium arsenide Molecular beam epitaxial growth Ovens Substrates Temperature X-ray diffraction X-ray scattering
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Zusammenfassung:	The molecular beam epitaxial growth of Si-doped GaAs, GaAs buffer layer, Al/sub 0.3/Ga/sub 0.7/As (x=0.3) and In/sub x/Ga/sub 1-x/As (x=0.2-0.4) on GaAs(100) substrate were examined by X-ray diffraction. Crystallinity of each layer was compared for each sample. The x composition value calculated from the In flux for InGaAs layers were compared to value obtained from X-ray diffraction matching to the Vegard Law/Fournet model curves to obtain the lattice parameters.
DOI:	10.1109/SMELEC.2002.1217876