MMIC development for Local Multipoint Distribution Service (LMDS)

This paper covers a few Monolithic Microwave Integrated Circuit (MMIC) design using the Gallium Arsenide (GaAs) pseudomorphic high electron mobility transistor (p-HEMT) technology to be used in Local Multipoint Distribution Service (LMDS) system. Three different sections describe in brief the design...

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Bibliographische Detailangaben
Hauptverfasser:	Ariffin, A., Jaafar, S., Bujang, S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Electron mobility Gallium arsenide HEMTs Integrated circuit technology Microwave integrated circuits Microwave transistors MMICs MODFETs Monolithic integrated circuits PHEMTs
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Beschreibung
Zusammenfassung:	This paper covers a few Monolithic Microwave Integrated Circuit (MMIC) design using the Gallium Arsenide (GaAs) pseudomorphic high electron mobility transistor (p-HEMT) technology to be used in Local Multipoint Distribution Service (LMDS) system. Three different sections describe in brief the design approach and methodology involved in each RF circuit design especially in stabilizing circuitry and meeting the small and large signal specifications.
DOI:	10.1109/SMELEC.2002.1217832