General approach to study thermo-e.m.f. generated by nonequilibrium carriers in bipolar semiconductors

General approach to study thermo-e.m.f. generated by nonequilibrium carriers in bipolar semiconductors

Linear theory of thermo-e.m.f. is developed for bipolar semiconductors. The role of nonequilibrium carriers of charge appearing due to the presence of the temperature gradient is investigated.

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Bibliographische Detailangaben
Hauptverfasser: Gurevich, Yu.G., Lohvinov, H., Titov, O., Ortiz, A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Charge carrier processes
Charge carriers
Circuits
Current density
Equations
Radiative recombination
Shape
Spontaneous emission
Temperature
Thermoelectricity
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Beschreibung
Zusammenfassung:Linear theory of thermo-e.m.f. is developed for bipolar semiconductors. The role of nonequilibrium carriers of charge appearing due to the presence of the temperature gradient is investigated.
DOI:10.1109/ICT.2002.1190328