Transformation of dense contact holes in oxide etching

Transformation of dense contact holes in oxide etching

For the semiconductor fabrication, the advanced photolithography technology of the high resolution by short wavelength, such as ArF, is studied. However, the photo resist used for present ArF lithography is deficient in the resistance for dry etching. In this study, it is investigated that the forma...

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Bibliographische Detailangaben
Hauptverfasser: Sakamori, S., Fujiwara, N., Miyatake, H., Oikawa, K., Yamanaka, M., Sasaki, T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Dry etching
Electric resistance
Fabrication
Lithography
Plasma applications
Plasma density
Resists
Rough surfaces
Shape
Surface roughness
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Beschreibung
Zusammenfassung:For the semiconductor fabrication, the advanced photolithography technology of the high resolution by short wavelength, such as ArF, is studied. However, the photo resist used for present ArF lithography is deficient in the resistance for dry etching. In this study, it is investigated that the formation of the dense contact holes with the ArF resist mask.
DOI:10.1109/IMNC.2002.1178549