Highly reliable ferroelectric memories using BLT thin films and robust integration schemes

Highly reliable ferroelectric memories using BLT thin films and robust integration schemes

We report on highly reliable characteristics of 1-Mb ferroelectric memories based on 0.35-μm CMOS technology ensuring ten-year retention and imprint at 175/spl deg/C, which have been successfully developed for the first time. This excellent reliability resulted from newly developed [Bi/sub 1-x/La/su...

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Veröffentlicht in:IEEE electron device letters 2002-12, Vol.23 (12), p.743-745
Hauptverfasser: Yang, B., Kang, Y.M., Lee, S.S., Noh, K.H., Lee, S.W., Kim, N.K., Kweon, S.Y., Yeom, S.J., Park, Y.J.
Format: Artikel
Sprache:eng
Schlagworte:
Bismuth
CMOS
CMOS technology
Degradation
Devices
Ferroelectric films
Ferroelectric materials
Ferroelectricity
Impurities
Moisture
Robustness
Temperature
Thin films
Transistors
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Beschreibung
Zusammenfassung:We report on highly reliable characteristics of 1-Mb ferroelectric memories based on 0.35-μm CMOS technology ensuring ten-year retention and imprint at 175/spl deg/C, which have been successfully developed for the first time. This excellent reliability resulted from newly developed [Bi/sub 1-x/La/sub x/] 4 Ti 3 O/sub 12/ (BLT) ferroelectric films with superior reliability performance at high temperatures, and also resulted from robust integration schemes free from ferroelectric degradation due to process impurities such as moisture and hydrogen.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2002.806299