Dual-metal gate CMOS with HfO2 gate dielectric
We report for the first time on a novel dual-metal gate CMOS integration on HfO/sub 2/ gate dielectric using TiN (PMOS) and TaSiN (NMOS) gate electrodes. Compared to a single metal integration, the dual-metal integration does not degrade gate leakage, mobility and charge trapping behavior. Promising...
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| creator | Samavedam, S.B. La, L.B. Smith, J. Dakshina-Murthy, S. Luckowski, E. Schaeffer, J. Zavala, M. Martin, R. Dhandapani, V. Triyoso, D. Tseng, H.H. Tobin, P.J. Gilmer, D.C. Hobbs, C. Taylor, W.J. Grant, J.M. Hegde, R.I. Mogab, J. Thomas, C. Abramowitz, P. Moosa, M. Conner, J. Jiang, J. Arunachalarn, V. Sadd, M. Nguyen, B.-Y. White, B. |
| description | We report for the first time on a novel dual-metal gate CMOS integration on HfO/sub 2/ gate dielectric using TiN (PMOS) and TaSiN (NMOS) gate electrodes. Compared to a single metal integration, the dual-metal integration does not degrade gate leakage, mobility and charge trapping behavior. Promising preliminary TDDB data were obtained from dual-metal gate MOSFETs, while still delivering much improved gate leakage (10/sup 4/ - 10/sup 5/ X better than SiO/sub 2/). |
| doi_str_mv | 10.1109/IEDM.2002.1175871 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>pascalfrancis_6IE</sourceid><recordid>TN_cdi_ieee_primary_1175871</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1175871</ieee_id><sourcerecordid>15785968</sourcerecordid><originalsourceid>FETCH-LOGICAL-i135t-771d05c40992c891fd3723db5c485bc0b75b310de764d50780b865f73960d1813</originalsourceid><addsrcrecordid>eNpFT01Lw0AQXRBBqfkBxUsuHhNndrM7u0dJqy205KA9l81-6EoqJYmI_95IBIeB4X0wvMfYEqFEBHO_Xa_2JQfgEySpCS9YZkjDtIIqxfGKZcPwDtMIUwkjr1m5-rRdcQqj7fJXO4a83jfP-Vca3_JNbPjM-RS64MY-uRt2GW03hOzvLtjhcf1Sb4pd87StH3ZFQiHHggg9SFeBMdxpg9EL4sK3E6Vl66Al2QoEH0hVXv7ma7WSkYRR4FGjWLC7-e_ZDs52sbcfLg3Hc59Otv8-oiQtjdKT73b2pRDCvzy3Fz-GR0vC</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Dual-metal gate CMOS with HfO2 gate dielectric</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Samavedam, S.B. ; La, L.B. ; Smith, J. ; Dakshina-Murthy, S. ; Luckowski, E. ; Schaeffer, J. ; Zavala, M. ; Martin, R. ; Dhandapani, V. ; Triyoso, D. ; Tseng, H.H. ; Tobin, P.J. ; Gilmer, D.C. ; Hobbs, C. ; Taylor, W.J. ; Grant, J.M. ; Hegde, R.I. ; Mogab, J. ; Thomas, C. ; Abramowitz, P. ; Moosa, M. ; Conner, J. ; Jiang, J. ; Arunachalarn, V. ; Sadd, M. ; Nguyen, B.-Y. ; White, B.</creator><creatorcontrib>Samavedam, S.B. ; La, L.B. ; Smith, J. ; Dakshina-Murthy, S. ; Luckowski, E. ; Schaeffer, J. ; Zavala, M. ; Martin, R. ; Dhandapani, V. ; Triyoso, D. ; Tseng, H.H. ; Tobin, P.J. ; Gilmer, D.C. ; Hobbs, C. ; Taylor, W.J. ; Grant, J.M. ; Hegde, R.I. ; Mogab, J. ; Thomas, C. ; Abramowitz, P. ; Moosa, M. ; Conner, J. ; Jiang, J. ; Arunachalarn, V. ; Sadd, M. ; Nguyen, B.-Y. ; White, B.</creatorcontrib><description>We report for the first time on a novel dual-metal gate CMOS integration on HfO/sub 2/ gate dielectric using TiN (PMOS) and TaSiN (NMOS) gate electrodes. Compared to a single metal integration, the dual-metal integration does not degrade gate leakage, mobility and charge trapping behavior. Promising preliminary TDDB data were obtained from dual-metal gate MOSFETs, while still delivering much improved gate leakage (10/sup 4/ - 10/sup 5/ X better than SiO/sub 2/).</description><identifier>ISBN: 9780780374621</identifier><identifier>ISBN: 0780374622</identifier><identifier>DOI: 10.1109/IEDM.2002.1175871</identifier><language>eng</language><publisher>Piscataway NJ: IEEE</publisher><subject>Applied sciences ; Atherosclerosis ; Circuit properties ; Dielectrics ; Digital circuits ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; Hafnium oxide ; MOCVD ; MOS devices ; MOSFET circuits ; Random access memory ; Robustness ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Tin ; Transistors ; Wet etching</subject><ispartof>Digest. International Electron Devices Meeting, 2002, p.433-436</ispartof><rights>2004 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1175871$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2051,4035,4036,27904,54899</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1175871$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=15785968$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Samavedam, S.B.</creatorcontrib><creatorcontrib>La, L.B.</creatorcontrib><creatorcontrib>Smith, J.</creatorcontrib><creatorcontrib>Dakshina-Murthy, S.</creatorcontrib><creatorcontrib>Luckowski, E.</creatorcontrib><creatorcontrib>Schaeffer, J.</creatorcontrib><creatorcontrib>Zavala, M.</creatorcontrib><creatorcontrib>Martin, R.</creatorcontrib><creatorcontrib>Dhandapani, V.</creatorcontrib><creatorcontrib>Triyoso, D.</creatorcontrib><creatorcontrib>Tseng, H.H.</creatorcontrib><creatorcontrib>Tobin, P.J.</creatorcontrib><creatorcontrib>Gilmer, D.C.</creatorcontrib><creatorcontrib>Hobbs, C.</creatorcontrib><creatorcontrib>Taylor, W.J.</creatorcontrib><creatorcontrib>Grant, J.M.</creatorcontrib><creatorcontrib>Hegde, R.I.</creatorcontrib><creatorcontrib>Mogab, J.</creatorcontrib><creatorcontrib>Thomas, C.</creatorcontrib><creatorcontrib>Abramowitz, P.</creatorcontrib><creatorcontrib>Moosa, M.</creatorcontrib><creatorcontrib>Conner, J.</creatorcontrib><creatorcontrib>Jiang, J.</creatorcontrib><creatorcontrib>Arunachalarn, V.</creatorcontrib><creatorcontrib>Sadd, M.</creatorcontrib><creatorcontrib>Nguyen, B.-Y.</creatorcontrib><creatorcontrib>White, B.</creatorcontrib><title>Dual-metal gate CMOS with HfO2 gate dielectric</title><title>Digest. International Electron Devices Meeting</title><addtitle>IEDM</addtitle><description>We report for the first time on a novel dual-metal gate CMOS integration on HfO/sub 2/ gate dielectric using TiN (PMOS) and TaSiN (NMOS) gate electrodes. Compared to a single metal integration, the dual-metal integration does not degrade gate leakage, mobility and charge trapping behavior. Promising preliminary TDDB data were obtained from dual-metal gate MOSFETs, while still delivering much improved gate leakage (10/sup 4/ - 10/sup 5/ X better than SiO/sub 2/).</description><subject>Applied sciences</subject><subject>Atherosclerosis</subject><subject>Circuit properties</subject><subject>Dielectrics</subject><subject>Digital circuits</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Hafnium oxide</subject><subject>MOCVD</subject><subject>MOS devices</subject><subject>MOSFET circuits</subject><subject>Random access memory</subject><subject>Robustness</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Tin</subject><subject>Transistors</subject><subject>Wet etching</subject><isbn>9780780374621</isbn><isbn>0780374622</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2002</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFT01Lw0AQXRBBqfkBxUsuHhNndrM7u0dJqy205KA9l81-6EoqJYmI_95IBIeB4X0wvMfYEqFEBHO_Xa_2JQfgEySpCS9YZkjDtIIqxfGKZcPwDtMIUwkjr1m5-rRdcQqj7fJXO4a83jfP-Vca3_JNbPjM-RS64MY-uRt2GW03hOzvLtjhcf1Sb4pd87StH3ZFQiHHggg9SFeBMdxpg9EL4sK3E6Vl66Al2QoEH0hVXv7ma7WSkYRR4FGjWLC7-e_ZDs52sbcfLg3Hc59Otv8-oiQtjdKT73b2pRDCvzy3Fz-GR0vC</recordid><startdate>2002</startdate><enddate>2002</enddate><creator>Samavedam, S.B.</creator><creator>La, L.B.</creator><creator>Smith, J.</creator><creator>Dakshina-Murthy, S.</creator><creator>Luckowski, E.</creator><creator>Schaeffer, J.</creator><creator>Zavala, M.</creator><creator>Martin, R.</creator><creator>Dhandapani, V.</creator><creator>Triyoso, D.</creator><creator>Tseng, H.H.</creator><creator>Tobin, P.J.</creator><creator>Gilmer, D.C.</creator><creator>Hobbs, C.</creator><creator>Taylor, W.J.</creator><creator>Grant, J.M.</creator><creator>Hegde, R.I.</creator><creator>Mogab, J.</creator><creator>Thomas, C.</creator><creator>Abramowitz, P.</creator><creator>Moosa, M.</creator><creator>Conner, J.</creator><creator>Jiang, J.</creator><creator>Arunachalarn, V.</creator><creator>Sadd, M.</creator><creator>Nguyen, B.-Y.</creator><creator>White, B.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope><scope>IQODW</scope></search><sort><creationdate>2002</creationdate><title>Dual-metal gate CMOS with HfO2 gate dielectric</title><author>Samavedam, S.B. ; La, L.B. ; Smith, J. ; Dakshina-Murthy, S. ; Luckowski, E. ; Schaeffer, J. ; Zavala, M. ; Martin, R. ; Dhandapani, V. ; Triyoso, D. ; Tseng, H.H. ; Tobin, P.J. ; Gilmer, D.C. ; Hobbs, C. ; Taylor, W.J. ; Grant, J.M. ; Hegde, R.I. ; Mogab, J. ; Thomas, C. ; Abramowitz, P. ; Moosa, M. ; Conner, J. ; Jiang, J. ; Arunachalarn, V. ; Sadd, M. ; Nguyen, B.-Y. ; White, B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i135t-771d05c40992c891fd3723db5c485bc0b75b310de764d50780b865f73960d1813</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Applied sciences</topic><topic>Atherosclerosis</topic><topic>Circuit properties</topic><topic>Dielectrics</topic><topic>Digital circuits</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Hafnium oxide</topic><topic>MOCVD</topic><topic>MOS devices</topic><topic>MOSFET circuits</topic><topic>Random access memory</topic><topic>Robustness</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Tin</topic><topic>Transistors</topic><topic>Wet etching</topic><toplevel>online_resources</toplevel><creatorcontrib>Samavedam, S.B.</creatorcontrib><creatorcontrib>La, L.B.</creatorcontrib><creatorcontrib>Smith, J.</creatorcontrib><creatorcontrib>Dakshina-Murthy, S.</creatorcontrib><creatorcontrib>Luckowski, E.</creatorcontrib><creatorcontrib>Schaeffer, J.</creatorcontrib><creatorcontrib>Zavala, M.</creatorcontrib><creatorcontrib>Martin, R.</creatorcontrib><creatorcontrib>Dhandapani, V.</creatorcontrib><creatorcontrib>Triyoso, D.</creatorcontrib><creatorcontrib>Tseng, H.H.</creatorcontrib><creatorcontrib>Tobin, P.J.</creatorcontrib><creatorcontrib>Gilmer, D.C.</creatorcontrib><creatorcontrib>Hobbs, C.</creatorcontrib><creatorcontrib>Taylor, W.J.</creatorcontrib><creatorcontrib>Grant, J.M.</creatorcontrib><creatorcontrib>Hegde, R.I.</creatorcontrib><creatorcontrib>Mogab, J.</creatorcontrib><creatorcontrib>Thomas, C.</creatorcontrib><creatorcontrib>Abramowitz, P.</creatorcontrib><creatorcontrib>Moosa, M.</creatorcontrib><creatorcontrib>Conner, J.</creatorcontrib><creatorcontrib>Jiang, J.</creatorcontrib><creatorcontrib>Arunachalarn, V.</creatorcontrib><creatorcontrib>Sadd, M.</creatorcontrib><creatorcontrib>Nguyen, B.-Y.</creatorcontrib><creatorcontrib>White, B.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection><collection>Pascal-Francis</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Samavedam, S.B.</au><au>La, L.B.</au><au>Smith, J.</au><au>Dakshina-Murthy, S.</au><au>Luckowski, E.</au><au>Schaeffer, J.</au><au>Zavala, M.</au><au>Martin, R.</au><au>Dhandapani, V.</au><au>Triyoso, D.</au><au>Tseng, H.H.</au><au>Tobin, P.J.</au><au>Gilmer, D.C.</au><au>Hobbs, C.</au><au>Taylor, W.J.</au><au>Grant, J.M.</au><au>Hegde, R.I.</au><au>Mogab, J.</au><au>Thomas, C.</au><au>Abramowitz, P.</au><au>Moosa, M.</au><au>Conner, J.</au><au>Jiang, J.</au><au>Arunachalarn, V.</au><au>Sadd, M.</au><au>Nguyen, B.-Y.</au><au>White, B.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Dual-metal gate CMOS with HfO2 gate dielectric</atitle><btitle>Digest. International Electron Devices Meeting</btitle><stitle>IEDM</stitle><date>2002</date><risdate>2002</risdate><spage>433</spage><epage>436</epage><pages>433-436</pages><isbn>9780780374621</isbn><isbn>0780374622</isbn><abstract>We report for the first time on a novel dual-metal gate CMOS integration on HfO/sub 2/ gate dielectric using TiN (PMOS) and TaSiN (NMOS) gate electrodes. Compared to a single metal integration, the dual-metal integration does not degrade gate leakage, mobility and charge trapping behavior. Promising preliminary TDDB data were obtained from dual-metal gate MOSFETs, while still delivering much improved gate leakage (10/sup 4/ - 10/sup 5/ X better than SiO/sub 2/).</abstract><cop>Piscataway NJ</cop><pub>IEEE</pub><doi>10.1109/IEDM.2002.1175871</doi><tpages>4</tpages></addata></record> |
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| ispartof | Digest. International Electron Devices Meeting, 2002, p.433-436 |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Applied sciences Atherosclerosis Circuit properties Dielectrics Digital circuits Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Hafnium oxide MOCVD MOS devices MOSFET circuits Random access memory Robustness Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Tin Transistors Wet etching |
| title | Dual-metal gate CMOS with HfO2 gate dielectric |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T22%3A27%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Dual-metal%20gate%20CMOS%20with%20HfO2%20gate%20dielectric&rft.btitle=Digest.%20International%20Electron%20Devices%20Meeting&rft.au=Samavedam,%20S.B.&rft.date=2002&rft.spage=433&rft.epage=436&rft.pages=433-436&rft.isbn=9780780374621&rft.isbn_list=0780374622&rft_id=info:doi/10.1109/IEDM.2002.1175871&rft_dat=%3Cpascalfrancis_6IE%3E15785968%3C/pascalfrancis_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1175871&rfr_iscdi=true |