Dual-metal gate CMOS with HfO2 gate dielectric

We report for the first time on a novel dual-metal gate CMOS integration on HfO/sub 2/ gate dielectric using TiN (PMOS) and TaSiN (NMOS) gate electrodes. Compared to a single metal integration, the dual-metal integration does not degrade gate leakage, mobility and charge trapping behavior. Promising...

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Hauptverfasser:	Samavedam, S.B., La, L.B., Smith, J., Dakshina-Murthy, S., Luckowski, E., Schaeffer, J., Zavala, M., Martin, R., Dhandapani, V., Triyoso, D., Tseng, H.H., Tobin, P.J., Gilmer, D.C., Hobbs, C., Taylor, W.J., Grant, J.M., Hegde, R.I., Mogab, J., Thomas, C., Abramowitz, P., Moosa, M., Conner, J., Jiang, J., Arunachalarn, V., Sadd, M., Nguyen, B.-Y., White, B.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Applied sciences Atherosclerosis Circuit properties Dielectrics Digital circuits Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Hafnium oxide MOCVD MOS devices MOSFET circuits Random access memory Robustness Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Tin Transistors Wet etching
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Zusammenfassung:	We report for the first time on a novel dual-metal gate CMOS integration on HfO/sub 2/ gate dielectric using TiN (PMOS) and TaSiN (NMOS) gate electrodes. Compared to a single metal integration, the dual-metal integration does not degrade gate leakage, mobility and charge trapping behavior. Promising preliminary TDDB data were obtained from dual-metal gate MOSFETs, while still delivering much improved gate leakage (10/sup 4/ - 10/sup 5/ X better than SiO/sub 2/).
DOI:	10.1109/IEDM.2002.1175871