Novel colossal magnetoresistive thin film nonvolatile resistance random access memory (RRAM)

A novel nonvolatile memory Colossal Magnetoresistive (CMR) thin film resistor for Resistance RAM (RRAM) application has been characterized. A 1RIT RRAM test circuit based on 0.5 /spl mu/m CMOS has been fabricated. RRAM is a low power high-speed memory technology. The memory cell programming pulse is...

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Bibliographische Detailangaben
Hauptverfasser:	Zhuang, W.W., Pan, W., Ulrich, B.D., Lee, J.J., Stecker, L., Burmaster, A., Evans, D.R., Hsu, S.T., Tajiri, M., Shimaoka, A., Inoue, K., Naka, T., Awaya, N., Sakiyama, A., Wang, Y., Liu, S.Q., Wu, N.J., Ignatiev, A.
Format:	Tagungsbericht
Sprache:	eng ; jpn
Schlagworte:	Circuit testing CMOS memory circuits Colossal magnetoresistance Nonvolatile memory Random access memory Read-write memory Resistors Space vector pulse width modulation Thin film circuits Transistors
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Beschreibung
Zusammenfassung:	A novel nonvolatile memory Colossal Magnetoresistive (CMR) thin film resistor for Resistance RAM (RRAM) application has been characterized. A 1RIT RRAM test circuit based on 0.5 /spl mu/m CMOS has been fabricated. RRAM is a low power high-speed memory technology. The memory cell programming pulse is less than 5 V and pulse width as narrow as 10 ns. The high/low resistance ratio may be larger than 1,000. The results of a test array indicated that RRAM could be programmed by bit or by word.
DOI:	10.1109/IEDM.2002.1175811