SHF-transistors parameters optimization by germanium doping of silicon monocrystal

SHF-transistors parameters optimization by germanium doping of silicon monocrystal

Optimization method of the SHF-transistors parameters has been designed. It is shown that germanium incorporation into SiO/sub 2/ reduces the leakage current and increases the breakdown voltage of MOS-structures.

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Bibliographische Detailangaben
Hauptverfasser: Afanas'ev, V.V., Brinkevich, D.I., Korzhenevski, A.G., Prosolovich, V.S., Yankovski, Yu.N.
Format: Tagungsbericht
Sprache:eng ; rus
Schlagworte:
Doping
Germanium
Helium
IEEE catalog
Microwave technology
MOSFET circuits
Organizing
Rail to rail outputs
Silicon
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Beschreibung
Zusammenfassung:Optimization method of the SHF-transistors parameters has been designed. It is shown that germanium incorporation into SiO/sub 2/ reduces the leakage current and increases the breakdown voltage of MOS-structures.
DOI:10.1109/CRMICO.2001.961631