Investigation of nanocontact electron properties to the semiconductor islands

Investigation of nanocontact electron properties to the semiconductor islands

Distribution of charge in semiconductor islands of InAs on GaAs surface and Ge/sub x/Si/sub 1-x/ on Si surface are investigated by atomic-force microscopy method with using conductor probes. Carriers of charge are concentrated on the islands perimeter that are shown in rough current peaks in this re...

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Hauptverfasser: Vostokov, N.V., Dryakhlushin, V.F., Klimov, A.Yu, Novikov, A.V., Khrykin, O.I., Shashkin, V.I.
Format: Tagungsbericht
Sprache:eng ; rus
Schlagworte:
Current-voltage characteristics
Electrons
Fabrication
Gallium arsenide
Helium
IEEE catalog
Organizing
Probes
Rough surfaces
Surface roughness
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Beschreibung
Zusammenfassung:Distribution of charge in semiconductor islands of InAs on GaAs surface and Ge/sub x/Si/sub 1-x/ on Si surface are investigated by atomic-force microscopy method with using conductor probes. Carriers of charge are concentrated on the islands perimeter that are shown in rough current peaks in this regions. Reason of this effect are indicated. Nanodimensional contact with /spl sim/10/sup -2/ mkm/sup 2/ area to single islands are fabricated, its current-voltage characteristics are investigated.
DOI:10.1109/CRMICO.2001.961611