An InAlAs/InAs MODFET

An InAlAs/InAs MODFET

An InAs modulation-doped field-effect transistor (MODFET) using an epitaxial heterostructure based entirely on arsenides is reported. The heterostructure was grown by MBE on InP and contains a 30-AA InAs channel. A 2- mu m-gate-length device displays well-behaved characteristics, showing sharp pinch...

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Veröffentlicht in:IEEE electron device letters 1991-12, Vol.12 (12), p.707-709
Hauptverfasser: Eugster, C.C., Broekaert, T.P.E., del Alamo, J.A., Fonstad, C.G.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Displays
Electronics
Epitaxial layers
Exact sciences and technology
FETs
HEMTs
Indium compounds
Indium phosphide
MODFETs
Molecular beam epitaxial growth
Quantization
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transconductance
Transistors
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Zusammenfassung:An InAs modulation-doped field-effect transistor (MODFET) using an epitaxial heterostructure based entirely on arsenides is reported. The heterostructure was grown by MBE on InP and contains a 30-AA InAs channel. A 2- mu m-gate-length device displays well-behaved characteristics, showing sharp pinch-off (V/sub th/=0.8 V) and small output conductance (5 mS/mm) at 300 K. The maximum transconductance is 170 mS mm with a maximum drain current of 312 mA/mm. Strong channel quantization results in a breakdown voltage of -9.6 V, a severalfold improvement over previous InAs MODFETs based on antimonides. Low-temperature magnetic field measurements show strong Shubnikov-de Haas oscillations which, over a certain range of gate voltage, strongly indicate that the electron channel resides in the InAs layer.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.116963