Measurement of threshold voltages of thin-film accumulation-mode PMOS/SOI transistors

Accumulation-mode PMOS transistors on SOI (silicon on insulator) are characterized by several conduction mechanisms. Measurements of the threshold voltage corresponding to each of them are presented for the first time. An intuitive physical interpretation of their dependence on the front- and back-g...

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Veröffentlicht in:	IEEE electron device letters 1991-12, Vol.12 (12), p.682-684
Hauptverfasser:	Terao, A., Flandre, D., Lora-Tamayo, E., Van de Wiele, F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Conductive films Current measurement Electronics Exact sciences and technology FETs MOSFETs Region 2 Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Thin film devices Thin film transistors Threshold voltage Time measurement Transconductance Transistors
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