Measurement of threshold voltages of thin-film accumulation-mode PMOS/SOI transistors

Measurement of threshold voltages of thin-film accumulation-mode PMOS/SOI transistors

Accumulation-mode PMOS transistors on SOI (silicon on insulator) are characterized by several conduction mechanisms. Measurements of the threshold voltage corresponding to each of them are presented for the first time. An intuitive physical interpretation of their dependence on the front- and back-g...

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Veröffentlicht in:IEEE electron device letters 1991-12, Vol.12 (12), p.682-684
Hauptverfasser: Terao, A., Flandre, D., Lora-Tamayo, E., Van de Wiele, F.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Conductive films
Current measurement
Electronics
Exact sciences and technology
FETs
MOSFETs
Region 2
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Thin film devices
Thin film transistors
Threshold voltage
Time measurement
Transconductance
Transistors
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Zusammenfassung:Accumulation-mode PMOS transistors on SOI (silicon on insulator) are characterized by several conduction mechanisms. Measurements of the threshold voltage corresponding to each of them are presented for the first time. An intuitive physical interpretation of their dependence on the front- and back-gate voltages is also given.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.116954