Measurement of threshold voltages of thin-film accumulation-mode PMOS/SOI transistors
Accumulation-mode PMOS transistors on SOI (silicon on insulator) are characterized by several conduction mechanisms. Measurements of the threshold voltage corresponding to each of them are presented for the first time. An intuitive physical interpretation of their dependence on the front- and back-g...
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| Veröffentlicht in: | IEEE electron device letters 1991-12, Vol.12 (12), p.682-684 |
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| container_end_page | 684 |
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| container_issue | 12 |
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| container_title | IEEE electron device letters |
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| creator | Terao, A. Flandre, D. Lora-Tamayo, E. Van de Wiele, F. |
| description | Accumulation-mode PMOS transistors on SOI (silicon on insulator) are characterized by several conduction mechanisms. Measurements of the threshold voltage corresponding to each of them are presented for the first time. An intuitive physical interpretation of their dependence on the front- and back-gate voltages is also given.< > |
| doi_str_mv | 10.1109/55.116954 |
| format | Article |
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Measurements of the threshold voltage corresponding to each of them are presented for the first time. An intuitive physical interpretation of their dependence on the front- and back-gate voltages is also given.< ></description><subject>Applied sciences</subject><subject>Conductive films</subject><subject>Current measurement</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>FETs</subject><subject>MOSFETs</subject><subject>Region 2</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Thin film devices</subject><subject>Thin film transistors</subject><subject>Threshold voltage</subject><subject>Time measurement</subject><subject>Transconductance</subject><subject>Transistors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNqNkM1LxDAQxYMouK4evHrqQQQPdZMmaZqjiB8Lu6yw67mk6dSNpM2apIL_vV266FXm8JjhN4-Zh9AlwXeEYDnjfNBccnaEJoTzIsU8p8doggUjKSU4P0VnIXxgTBgTbILelqBC76GFLiauSeLWQ9g6Wydfzkb1DmGcmi5tjG0TpXXf9lZF47q0dTUkr8vVerZezZPoVRdMiM6Hc3TSKBvg4qBTtHl63Dy8pIvV8_zhfpFqhmlMa6aGwozooa_qQkkOuSrqHLCSFee4ohREMRyqJKNC1KIiuKY5NAPVSDpFN6PtzrvPHkIsWxM0WKs6cH0os0KKDGf_ARkpMrwHb0dQexeCh6bcedMq_10SXO4DLjkvx4AH9vpgqoJWthne1yb8LnAiMlnkA3Y1YgYA_uxGjx-kAoJl</recordid><startdate>19911201</startdate><enddate>19911201</enddate><creator>Terao, A.</creator><creator>Flandre, D.</creator><creator>Lora-Tamayo, E.</creator><creator>Van de Wiele, F.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope></search><sort><creationdate>19911201</creationdate><title>Measurement of threshold voltages of thin-film accumulation-mode PMOS/SOI transistors</title><author>Terao, A. ; Flandre, D. ; Lora-Tamayo, E. ; Van de Wiele, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c403t-d4a4a4041cc40bd8a95e6a8d6e0a9b550b33e78474a94377d7b10d36ef6a8f93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Applied sciences</topic><topic>Conductive films</topic><topic>Current measurement</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>FETs</topic><topic>MOSFETs</topic><topic>Region 2</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Thin film devices</topic><topic>Thin film transistors</topic><topic>Threshold voltage</topic><topic>Time measurement</topic><topic>Transconductance</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Terao, A.</creatorcontrib><creatorcontrib>Flandre, D.</creatorcontrib><creatorcontrib>Lora-Tamayo, E.</creatorcontrib><creatorcontrib>Van de Wiele, F.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Terao, A.</au><au>Flandre, D.</au><au>Lora-Tamayo, E.</au><au>Van de Wiele, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Measurement of threshold voltages of thin-film accumulation-mode PMOS/SOI transistors</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1991-12-01</date><risdate>1991</risdate><volume>12</volume><issue>12</issue><spage>682</spage><epage>684</epage><pages>682-684</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Accumulation-mode PMOS transistors on SOI (silicon on insulator) are characterized by several conduction mechanisms. Measurements of the threshold voltage corresponding to each of them are presented for the first time. An intuitive physical interpretation of their dependence on the front- and back-gate voltages is also given.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/55.116954</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 1991-12, Vol.12 (12), p.682-684 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_ieee_primary_116954 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Conductive films Current measurement Electronics Exact sciences and technology FETs MOSFETs Region 2 Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Thin film devices Thin film transistors Threshold voltage Time measurement Transconductance Transistors |
| title | Measurement of threshold voltages of thin-film accumulation-mode PMOS/SOI transistors |
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