Electromigration characteristics of tungsten plug vias under pulse and bidirectional current stressing

Electromigration characteristics of tungsten plug vias under pulse and bidirectional current stressing

Using Kelvin test structures, electromigration performances of selective CVD tungsten filled vias under DC, pulsed DC, and AC current signals have been studied. The metallization consists of Al-Cu/TiW multilevel metals. The via electromigration lifetime exhibits a current polarity dependence. The vi...

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Veröffentlicht in:IEEE electron device letters 1991-12, Vol.12 (12), p.646-648
Hauptverfasser: Tao, J., Young, K.K., Pico, C.A., Cheung, N.W., Hu, C.
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum
Applied sciences
Circuit testing
Electromigration
Electronics
Electrons
Exact sciences and technology
Integrated circuit interconnections
Kelvin
Materials
Metallization
Plugs
Sputter etching
Tungsten
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Zusammenfassung:Using Kelvin test structures, electromigration performances of selective CVD tungsten filled vias under DC, pulsed DC, and AC current signals have been studied. The metallization consists of Al-Cu/TiW multilevel metals. The via electromigration lifetime exhibits a current polarity dependence. The via AC lifetimes are found to be much longer (more than 1000*) than DC lifetimes under the same peak stressing current density. The via lifetimes under pulsed DC stress of 50% duty factor are twice the DC lifetimes at low-frequency regions (10 kHz). The results are in agreement with the vacancy relation model.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.116942