Tunable mode-locked semiconductor laser with Bragg mirror external cavity

Tunable mode-locked semiconductor laser with Bragg mirror external cavity

We present a simplified design for a wavelength tunable external cavity mode-locked laser by employing a wedged GaAs/AlGaAs Bragg mirror. The device emits 4-6 ps pulses at 10 GHz and is tunable over 15 nm. Although, in the present configuration, tunability is limited to 15 nm, however, we have shown...

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Hauptverfasser: Yvind, K., Jorgensen, T., Birkedal, D., Skovgaard, P.M.W., Hanberg, J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bandwidth
Gallium arsenide
Laser mode locking
Laser tuning
Mirrors
Optical design
Optical pulses
Reflectivity
Semiconductor lasers
Tunable circuits and devices
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Beschreibung
Zusammenfassung:We present a simplified design for a wavelength tunable external cavity mode-locked laser by employing a wedged GaAs/AlGaAs Bragg mirror. The device emits 4-6 ps pulses at 10 GHz and is tunable over 15 nm. Although, in the present configuration, tunability is limited to 15 nm, however, we have shown the potential of a tuning range above 100 nm in a single mechanical stable device.
ISSN:1092-8081
2766-1733
DOI:10.1109/LEOS.2002.1159544