Optimization of InP/GaInAs heterojunction bipolar transistors and phototransistors

Optimization of InP/GaInAs heterojunction bipolar transistors and phototransistors

The tradeoffs encountered in monolithic integration of p-i-n photodetectors and heterojunction bipolar transistors are described. For further improving the frequency performance of the individual transistors, the main challenges related to epitaxy are shortening of the base transit time by band gap...

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Bibliographische Detailangaben
Hauptverfasser: Ritter, Sheinman, Sidorov, Cohen, Gavrilov, Vered, Zohar, Lasri
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Epitaxial growth
Gallium compounds
Heterojunction bipolar transistors
Indium compounds
Optimization methods
p-i-n photodiodes
Photodetectors
Phototransistors
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Beschreibung
Zusammenfassung:The tradeoffs encountered in monolithic integration of p-i-n photodetectors and heterojunction bipolar transistors are described. For further improving the frequency performance of the individual transistors, the main challenges related to epitaxy are shortening of the base transit time by band gap engineering, and the proper grading of the base emitter and base collector junctions.
DOI:10.1109/MWP.2002.1158932