RF and DC characteristics of low-leakage InAs/AlSb HFETs

InAs/AlSb HFETs with excellent RF and DC properties are reported. The drain currents are 750 mA/mm. with peak transconductance g/sub m/ of 1.1 S/mm. The gate leakage is below 1 nA//spl mu/m/sup 2/ for low gate bias. The threshold voltages of 0.25 /spl mu/m and 0.5 /spl mu/m gate-length devices are -...

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Bibliographische Detailangaben
Hauptverfasser:	Brar, B., Nagy, G., Bergman, J., Sullivan, G., Rowell, P., Lin, H.K., Dahlstrom, M., Kadow, C., Rodwell, M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Applied sciences Electrical resistance measurement Electron mobility Electronics Epitaxial layers Exact sciences and technology Gallium arsenide Gate leakage HEMTs MODFETs Radio frequency Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Tellurium Transistors Voltage
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Zusammenfassung:	InAs/AlSb HFETs with excellent RF and DC properties are reported. The drain currents are 750 mA/mm. with peak transconductance g/sub m/ of 1.1 S/mm. The gate leakage is below 1 nA//spl mu/m/sup 2/ for low gate bias. The threshold voltages of 0.25 /spl mu/m and 0.5 /spl mu/m gate-length devices are -2.5 and -1.5 V respectively, indicating short channel effects are present. Small-signal measurements on a 0.25 /spl mu/m gate-length device show f/sub /spl tau// of 120 GHz and f/sub max/ of 100 GHz at drain voltages below 0.4 V.
DOI:	10.1109/LECHPD.2002.1146781