Lanthanides application in planar technology of microwave devices production

Lanthanides application in planar technology of microwave devices production

It is shown that rare-earth doping of silicon can be useful in the technology of SHF-devices. The use of silicon doped by rare-earth elements (REE) as substrates for epitaxial layers allows the improvement of the stability of p-n junctions and MOS-structures to radiation effects.

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Bibliographische Detailangaben
Hauptverfasser: Brinkevich, D.I., Prosolovich, V.S., Yankovski, Yu.N.
Format: Tagungsbericht
Sprache:eng ; rus
Schlagworte:
Doping
Epitaxial layers
Microwave devices
Microwave technology
P-n junctions
Production
Radiation effects
Silicon
Stability
Substrates
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Beschreibung
Zusammenfassung:It is shown that rare-earth doping of silicon can be useful in the technology of SHF-devices. The use of silicon doped by rare-earth elements (REE) as substrates for epitaxial layers allows the improvement of the stability of p-n junctions and MOS-structures to radiation effects.
DOI:10.1109/CRMICO.2002.1137301