Low-resistance ohmic contact to n-GaAs

Low-resistance ohmic contact to n-GaAs

A multi-layered AuGe-Ti-TiN-Ti-Au metallization has been researched to develop a low-resistance ohmic contact to n-GaAs. The value of the obtained specific contact resistance was (4.1+5.6)/spl times/10/sup -7/ ohm/spl middot/cm and retained its stability after a five-hour treatment at 300/spl deg/C.

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Bibliographische Detailangaben
Hauptverfasser: Vald-Perlov, V.M., Veitz, V.V.
Format: Tagungsbericht
Sprache:eng ; rus
Schlagworte:
Argon
Contact resistance
Electrical resistance measurement
Gallium arsenide
Gold
Hafnium
Neodymium
Ohmic contacts
Organizing
Tin
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Beschreibung
Zusammenfassung:A multi-layered AuGe-Ti-TiN-Ti-Au metallization has been researched to develop a low-resistance ohmic contact to n-GaAs. The value of the obtained specific contact resistance was (4.1+5.6)/spl times/10/sup -7/ ohm/spl middot/cm and retained its stability after a five-hour treatment at 300/spl deg/C.
DOI:10.1109/CRMICO.2002.1137189