Fabrication of Through-Wafer Via Conductors in Si by Laser Photochemical Processing

Fabrication of Through-Wafer Via Conductors in Si by Laser Photochemical Processing

A procedure for the fabrication of high-aspect-ratio through-wafer via conductors in Si is described. The technique is based on a rapid highly anistropic laser etching process followed by a two-step metallization. The surface area occupied by the via on the front, circuit side of the wafer, can be a...

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Veröffentlicht in:IEEE transactions on components, hybrids, and manufacturing technology hybrids, and manufacturing technology, 1982-12, Vol.5 (4), p.520-521
Hauptverfasser: Ehrlich, D., Silversmith, D., Mountain, R., Tsao, J.
Format: Artikel
Sprache:eng
Schlagworte:
Chemical lasers
Circuits
Conductors
Gas lasers
Metallization
Optical device fabrication
Photochemistry
Surface emitting lasers
Wafer bonding
Wet etching
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Zusammenfassung:A procedure for the fabrication of high-aspect-ratio through-wafer via conductors in Si is described. The technique is based on a rapid highly anistropic laser etching process followed by a two-step metallization. The surface area occupied by the via on the front, circuit side of the wafer, can be as small as 5 µm x 5 µm.
ISSN:0148-6411
1558-3082
DOI:10.1109/TCHMT.1982.1135991