A Study of High Power Pulsed Characteristics of Low-Noise GaAs MESFET's

Low-noise GaAs MESFET's of various types have been investigated for short-term catastrophic burnout ratings when exposed to pulses from an X -band radar transmitter 6 = T/R cell combination. Failure modes have been categorized, and SEM, EDAX and optical techniques employed in the associated fai...

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Veröffentlicht in:	IEEE transactions on microwave theory and techniques 1981-12, Vol.29 (12), p.1298-1310
Hauptverfasser:	James, D.S., Dormer, L.
Format:	Artikel
Sprache:	eng
Schlagworte:	FETs Gallium arsenide MESFETs Noise measurement Optical amplifiers Pulse amplifiers Radar Radio frequency Radiofrequency amplifiers Testing
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