A Study of High Power Pulsed Characteristics of Low-Noise GaAs MESFET's

A Study of High Power Pulsed Characteristics of Low-Noise GaAs MESFET's

Low-noise GaAs MESFET's of various types have been investigated for short-term catastrophic burnout ratings when exposed to pulses from an X -band radar transmitter 6 = T/R cell combination. Failure modes have been categorized, and SEM, EDAX and optical techniques employed in the associated fai...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 1981-12, Vol.29 (12), p.1298-1310
Hauptverfasser: James, D.S., Dormer, L.
Format: Artikel
Sprache:eng
Schlagworte:
FETs
Gallium arsenide
MESFETs
Noise measurement
Optical amplifiers
Pulse amplifiers
Radar
Radio frequency
Radiofrequency amplifiers
Testing
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Zusammenfassung:Low-noise GaAs MESFET's of various types have been investigated for short-term catastrophic burnout ratings when exposed to pulses from an X -band radar transmitter 6 = T/R cell combination. Failure modes have been categorized, and SEM, EDAX and optical techniques employed in the associated failure analyses. A limited number of longer term tests at lower pulse levels are also described. Post-dosage, interpulse RF performance has been studied by use of a special test set described, the initial results obtained are presented.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.1981.1130556