Numerical simulation of parameters of ZnCdHgTe films and ZnCdHgTe-based heterostructures
Two simple calculation techniques are proposed for numerical modeling and estimation of the main parameters determining the operational reliability of active elements based on A/sup 2/B/sup 6/ materials. In particular, room-temperature processes of charge carrier transport accounting for inhomogenei...
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| creator | Khlyap, G. Sydorchuk, P. |
| description | Two simple calculation techniques are proposed for numerical modeling and estimation of the main parameters determining the operational reliability of active elements based on A/sup 2/B/sup 6/ materials. In particular, room-temperature processes of charge carrier transport accounting for inhomogeneities of epitaxial film surfaces and the work function of the heterostructures based on the narrow-gap solid solution ZnCdHgTe are reported. The calculation algorithm is also presented. |
| doi_str_mv | 10.1109/ASDAM.2002.1088485 |
| format | Conference Proceeding |
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In particular, room-temperature processes of charge carrier transport accounting for inhomogeneities of epitaxial film surfaces and the work function of the heterostructures based on the narrow-gap solid solution ZnCdHgTe are reported. The calculation algorithm is also presented.</description><identifier>ISBN: 078037276X</identifier><identifier>ISBN: 9780780372764</identifier><identifier>DOI: 10.1109/ASDAM.2002.1088485</identifier><language>eng</language><publisher>IEEE</publisher><subject>Current measurement ; Dielectric constant ; Electrons ; Electrooptic effects ; Lattices ; Modems ; Numerical simulation ; Optical films ; Photonic band gap ; Variable speed drives</subject><ispartof>The Fourth International Conference on Advanced Semiconductor Devices and Microsystem, 2002, p.99-102</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1088485$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1088485$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Khlyap, G.</creatorcontrib><creatorcontrib>Sydorchuk, P.</creatorcontrib><title>Numerical simulation of parameters of ZnCdHgTe films and ZnCdHgTe-based heterostructures</title><title>The Fourth International Conference on Advanced Semiconductor Devices and Microsystem</title><addtitle>ASDAM</addtitle><description>Two simple calculation techniques are proposed for numerical modeling and estimation of the main parameters determining the operational reliability of active elements based on A/sup 2/B/sup 6/ materials. In particular, room-temperature processes of charge carrier transport accounting for inhomogeneities of epitaxial film surfaces and the work function of the heterostructures based on the narrow-gap solid solution ZnCdHgTe are reported. The calculation algorithm is also presented.</description><subject>Current measurement</subject><subject>Dielectric constant</subject><subject>Electrons</subject><subject>Electrooptic effects</subject><subject>Lattices</subject><subject>Modems</subject><subject>Numerical simulation</subject><subject>Optical films</subject><subject>Photonic band gap</subject><subject>Variable speed drives</subject><isbn>078037276X</isbn><isbn>9780780372764</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2002</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo9T0tLxDAYDIigrvsH9JI_0PolaR49lvpYYdWDKyxelrT9opE-lqQ9-O-3i4tzGWYYhhlCbhikjEF-V7zfFy8pB-ApA2MyI8_IFWgDQnOtthdkGeMPzMgkA6EuyfZ16jD42rY0-m5q7eiHng6O7m2wHY4Y4lF99mWz-togdb7tIrV9828llY3Y0O9jdohjmOpxChivybmzbcTliRfk4_FhU66S9dvTc1msE8-0HBNtpRBWGlRGVzZ3Na80SI2QS3DzTKtyBw2iqg2vmZSzqx13OlOSKwVaLMjtX69HxN0--M6G393pvDgAkrVQSg</recordid><startdate>2002</startdate><enddate>2002</enddate><creator>Khlyap, G.</creator><creator>Sydorchuk, P.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2002</creationdate><title>Numerical simulation of parameters of ZnCdHgTe films and ZnCdHgTe-based heterostructures</title><author>Khlyap, G. ; Sydorchuk, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-7a533a58e687ba9fc2b7057e0950f004a69f0dee6c82c15550f7f2f7465266073</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Current measurement</topic><topic>Dielectric constant</topic><topic>Electrons</topic><topic>Electrooptic effects</topic><topic>Lattices</topic><topic>Modems</topic><topic>Numerical simulation</topic><topic>Optical films</topic><topic>Photonic band gap</topic><topic>Variable speed drives</topic><toplevel>online_resources</toplevel><creatorcontrib>Khlyap, G.</creatorcontrib><creatorcontrib>Sydorchuk, P.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Khlyap, G.</au><au>Sydorchuk, P.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Numerical simulation of parameters of ZnCdHgTe films and ZnCdHgTe-based heterostructures</atitle><btitle>The Fourth International Conference on Advanced Semiconductor Devices and Microsystem</btitle><stitle>ASDAM</stitle><date>2002</date><risdate>2002</risdate><spage>99</spage><epage>102</epage><pages>99-102</pages><isbn>078037276X</isbn><isbn>9780780372764</isbn><abstract>Two simple calculation techniques are proposed for numerical modeling and estimation of the main parameters determining the operational reliability of active elements based on A/sup 2/B/sup 6/ materials. In particular, room-temperature processes of charge carrier transport accounting for inhomogeneities of epitaxial film surfaces and the work function of the heterostructures based on the narrow-gap solid solution ZnCdHgTe are reported. The calculation algorithm is also presented.</abstract><pub>IEEE</pub><doi>10.1109/ASDAM.2002.1088485</doi><tpages>4</tpages></addata></record> |
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| ispartof | The Fourth International Conference on Advanced Semiconductor Devices and Microsystem, 2002, p.99-102 |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Current measurement Dielectric constant Electrons Electrooptic effects Lattices Modems Numerical simulation Optical films Photonic band gap Variable speed drives |
| title | Numerical simulation of parameters of ZnCdHgTe films and ZnCdHgTe-based heterostructures |
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